NTE ELECTRONICS

双极性晶体管, TO-12

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm

NEXPERIA

单晶体管 双极, 开关, PNP, -40 V, 200 MHz, 250 mW, -600 mA, 100 hFE

VISHAY

场效应管, MOSFET, N沟道, 600V, 21A, TO-220F

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 4.4 A, 525 V, 1.28 ohm, 10 V, 3.75 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 30 A, 600 V, 50 mohm, 10 V, 4 V

VISHAY

晶体管, IGBT阵列&模块, NPN, 66 A, 4.15 V, 330 W, 1.2 kV, EconoPACK

ROHM

晶体管 双极预偏置/数字, 双路, 双路 PNP, 50 V, -100 mA, 10 kohm, 10 kohm

NEXPERIA

晶体管 双极预偏置/数字, 单路PNP, -40 V, -800 mA, 1 kohm, 1 kohm

FUJI ELECTRIC

晶体管, MOSFET, N沟道, 73 A, 100 V, 25 mohm, 10 V, 5 V

NEXPERIA

双极性晶体管, NPN, 30V, 100MA, 3-SOT-23, 整卷

NEXPERIA

双极晶体管阵列, PNP, -45 V, 390 mW, -100 mA, 290 hFE, SOT-143B

NEXPERIA

单晶体管 双极, NPN, 20 V, 260 MHz, 250 mW, 30 mA, 65 hFE

ROHM

晶体管 双极预偏置/数字, 数字式, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -40 A, -30 V, 0.014 ohm, -10 V, -1.8 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0075 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 4.5 A, 60 V, 0.042 ohm, 10 V, 2.2 V

INFINEON

晶体管, IGBT阵列&模块, 双NPN, 240 A, 1.75 V, 1.1 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 600 A, 1.75 V, 3.35 kW, 1.2 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 930 A, 2 V, 4.15 kW, 1.7 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 900 A, 1.7 V, 5.1 kW, 1.2 kV, Module

IXYS RF

晶体管, 射频FET, 500 V, 55 A, 600 W, 500 kHz, SOT-227B

ON SEMICONDUCTOR

双极性晶体管, NPN, 30V SOT-23, 整卷

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm

NEXPERIA

单晶体管 双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE