NEXPERIA

单晶体管 双极, 开关, NPN, 15 V, 500 MHz, 250 mW, 200 mA, 20 hFE

VISHAY

场效应管, MOSFET, P沟道, -30V, 29A, SOIC, 整卷

VISHAY

晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0031 ohm, -10 V, -400 mV

INFINEON

晶体管, MOSFET, N沟道, 90 A, 60 V, 3 mohm, 10 V, 1.7 V

MICROSEMI

射频场效应管, 80V

ROHM

双极晶体管阵列, 双路, NPN, 50 V, 150 mW, 100 mA, 68 hFE, SOT-363

VISHAY

场效应管, MOSFET, P沟道, -200V, 3.8A, POWERPAK-SO, 整卷

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 30V, 7.5A, SOIC-8, 整卷

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 60V, 500mA, SOT-23, 整卷

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, 60V, 180mA, SOT-23, 整卷

VISHAY

场效应管, MOSFET, N沟道 与 P 通道, 60V, 0.046Ω

VISHAY

场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC-8, 整卷

VISHAY

场效应管, MOSFET, 双P沟道, -20V, 7.4A

NEXPERIA

单晶体管 双极, PNP, -45 V, 70 MHz, 250 mW, -100 mA, 210 hFE

INFINEON

晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0035 ohm, 10 V, 2 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, -1.5 A, 25 hFE

NEXPERIA

单晶体管 双极, NPN, 45 V, 250 MHz, 250 mW, 100 mA, 30 hFE

NXP

射频场效应管, JFET, N沟道, 20V, 25mA, 3-SOT-23, 整卷

ROHM

单晶体管 双极, N沟道, 180 A, 1.2 kV, 2.7 V

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0019 ohm, 10 V, 3 V

STMICROELECTRONICS

单晶体管 双极, NPN, 400 V, 70 W, 3.5 A, 48 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET™, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 4.3 A, 60 V, 55 mohm, 10 V, 2.2 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 1.39 kA, 2 V, 6.25 kW, 1.7 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 660 A, 3.4 V, 4.8 kW, 3.3 kV, Module