INFINEON

晶体管, IGBT阵列&模块, N沟道, 1 kA, 2.55 V, 3.3 kV, Module

INFINEON

晶体管, IGBT阵列&模块, N沟道, 2.3 kA, 2 V, 8.95 kW, 1.7 kV, Module

INFINEON

单晶体管, IGBT, 3 A, 2.8 V, 29 W, 1.2 kV, TO-220, 3 引脚

INFINEON

场效应管, MOSFET晶体管, 整卷

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 42W, TO-220 FULLPAK

INFINEON

晶体管, MOSFET, N沟道, 56 A, 30 V, 9.5 mohm, 10 V, 4 V

STMICROELECTRONICS

单晶体管 双极, NPN, 100 V, 20 W, 5 A, 1000 hFE

ON SEMICONDUCTOR

功率晶体管, PNP, -80V, D-PAK, 整卷

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 80 V, 150 MHz, 225 mW, 500 mA, 75 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -5.9 A, -30 V, 50 mohm, -10 V, -2.7 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 47 kohm, 22 kohm

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm

NEXPERIA

晶体管 双极预偏置/数字, BRT, 双路 PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm

NEXPERIA

单晶体管 双极, NPN, PNP, 40 V, 100 MHz, 200 mW, 100 mA, 120 hFE

VISHAY

场效应管, MOSFET, P沟道, -20V, 3.1A TO-236, 整卷

VISHAY

场效应管, MOSFET, N沟道, 100V, 1.5A, SOT-23, 整卷

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 17 A, 500 V, 270 mohm, 10 V, 3.75 V

NEXPERIA

双极性晶体管, NPN, 45V, 500MA, 3-SOT-23, 整卷

INFINEON

场效应管, MOSFET晶体管, 整卷

VISHAY

场效应管, MOSFET, N沟道, 60V, 240mA TO-236, 整卷

MULTICOMP

场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-323-3

VISHAY

场效应管, MOSFET, 双P沟道, -30V, 0.01Ω, -5.3A, SOIC-8, 整卷

TEXAS INSTRUMENTS

驱动器

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 30V, 10.2A, SOT-223, 整卷

ON SEMICONDUCTOR/FAIRCHILD

晶体管, JFET, -40V, 整卷