INFINEON

场效应管, P通道, MOSFET, -30V, -16A, SOIC, 整卷

INFINEON

晶体管, MOSFET, N沟道, 21 A, 60 V, 0.0035 ohm, 10 V, 4 V

INFINEON

场效应管, MOSFET, N沟道, 30V, 5.3A, SOT-23, 整卷

INFINEON

场效应管, MOSFET, P沟道, -30V, -3.6 A, SOT-23, 整卷

INFINEON

场效应管, N通道, MOSFET, 20V, 6.5A, MICRO-6, 整卷

ON SEMICONDUCTOR/FAIRCHILD

晶体管, JFET, JFET, 30 V, -7 mA, -60 mA, 6 V, TO-92, JFET

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, PNP, 120 V, 300 W, 50 A, 400 hFE

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 80 V, 85 MHz, 20 W, 8 A, 40 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, JFET, JFET, 30 V, -1.5 mA, -20 mA, 2.5 V, SOT-23, JFET

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 30 V, 125 MHz, 225 mW, 300 mA, 10000 hFE

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 25 V, 650 MHz, 225 mW, 4 mA, 60 hFE

NEXPERIA

单晶体管 双极, NPN, 20 V, 100 MHz, 300 mW, 2 A, 200 hFE

NEXPERIA

单晶体管 双极, PNP, -40 V, 60 MHz, 550 mW, 5 A, 250 hFE

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 10 kohm, 47 kohm, 4.7 电阻比率

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 100 kohm, 100 kohm

NEXPERIA

单晶体管 双极, NPN, 30 V, 250 MHz, 250 mW, 600 mA, 100 hFE

VISHAY

场效应管, MOSFET, N沟道, 60V, 5.6A, POWERPAK 1212, 整卷

VISHAY

场效应管, MOSFET, N沟道, 60V, 10.3A, SOIC-8, 整卷

INFINEON

功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 9 A, 30 V, 0.015 ohm, 10 V, 1 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 5.4 A, 400 V, 250 mohm, 10 V, 3.75 V

STMICROELECTRONICS

双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V

VISHAY

场效应管, MOSFET, P沟道, -60V, -185mA, SOT-23, 整卷

VISHAY

晶体管, IGBT阵列&模块, NPN, 100 A, 3.8 V, 480 W, 1.2 kV, EconoPACK

NEXPERIA

场效应管, MOSFET, N沟道 通道, 60V, 300MA, 3-SOT-23, 整卷