INFINEON

N CH POWER MOSFET, HEXFET, 30V, 27A, PQF

NEXPERIA

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm

NXP

场效应管阵列, MOSFET, N与P沟道, 30V, 3.5A, 8-SOIC

MICRO COMMERCIAL COMPONENTS

双极性晶体管, NPN, 30VDC, SOT-23

VISHAY

晶体管, 双N&P沟道

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道, 1.5KV, 8Ω, TO-3P-3

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 1.2KV, 45A

NXP

开关晶体管, PNP, -40V, -600MA

NEXPERIA

晶体管, MOSFET, N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV

NEXPERIA

晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.058 ohm, -4.5 V, -750 mV

ON SEMICONDUCTOR

双极晶体管

VISHAY

双路场效应管, MOSFET, N和P沟道, 8 A, 20 V, 0.0115 ohm, 4.5 V, 1.4 V

ON SEMICONDUCTOR

晶体管

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 25V, 680mA, SuperSOT, 整卷

ON SEMICONDUCTOR/FAIRCHILD

场效应管, N通道, MOSFET, 25V, 34A, 8-PWR56

ON SEMICONDUCTOR

场效应管, MOSFET, N沟道

DIODES INC.

晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 47 kohm, 47 kohm, 1 电阻比率

DIODES INC.

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

NEXPERIA

晶体管, MOSFET, P沟道, -230 mA, -50 V, 4.5 ohm, -10 V, -1.6 V

DIODES INC.

晶体管, MOSFET, P沟道, -1.1 A, -60 V, 400 mohm, -10 V, -3 V

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, AEC-Q100, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 420 hFE

VISHAY

MOSFET, N CHANNEL, 30V, 40A, POWERPAK SO-8

VISHAY

N CHANNEL MOSFET, 20V, 60A, SOIC

NEXPERIA

晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV