NEXPERIA

晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm

NEXPERIA

双路场效应管, MOSFET, 双N沟道, 800 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 1.6 A, -30 V, 200 mohm, -10 V, -1.9 V

NXP

射频晶体管, PNP

VISHAY

场效应管, MOSFET, P沟道, -30V, -19.7A, SOIC-8

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 500 mA, 25 V, 0.34 ohm, 4.5 V, 800 mV

VISHAY

晶体管, MOSFET, P沟道, -110 A, -40 V, 0.0041 ohm, -10 V, -3 V

DIODES INC.

晶体管, MOSFET, AEC-Q101, N沟道, 630 mA, 20 V, 0.3 ohm, 4.5 V, 1 V

VISHAY

晶体管, MOSFET, N沟道, 200 mA, 240 V, 2.2 ohm, 10 V, 1.65 V

VISHAY

场效应管, MOSFET, N沟道

NEXPERIA

单晶体管 双极, NPN, 40 V, 300 MHz, 240 mW, 200 mA, 100 hFE

VISHAY

场效应管, MOSFET, N沟道, D-S, 20V, 7.9A, TSOP6

INFINEON

晶体管, MOSFET, N沟道, 55 A, 80 V, 10.3 mohm, 10 V, 2.8 V

VISHAY

晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0046 ohm, 10 V, 1.2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV

VISHAY

晶体管, MOSFET, N沟道, 40 A, 60 V, 0.007 ohm, 10 V

NEXPERIA

单晶体管 双极, AEC-Q101, PNP, -60 V, 100 MHz, 250 mW, -100 mA, 220 hFE

DIODES INC.

晶体管, MOSFET, P沟道, -3.5 A, -60 V, 0.11 ohm, -10 V, -3 V

VISHAY

晶体管, MOSFET, N沟道, 5.2 A, 30 V, 0.034 ohm, 4.5 V, 400 mV

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -40 V, 250 MHz, 625 mW, -200 mA, 30 hFE

INFINEON

晶体管, 射频FET, -100 V, -15 A, 128 W, TO-252

INFINEON

双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 800 mV

ON SEMICONDUCTOR/FAIRCHILD

General-Purpose Amplifier, NPN, PNP, 30 V, 700 mW, 500 A, 50, SuperSOT

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 2.1 A, 30 V, 0.08 ohm, 10 V, 1.7 V