
ON SEMICONDUCTOR
单晶体管 双极, PNP, -40 V, 160 MHz, 2 W, -3 A, 100 hFE

ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -5.7 A, -60 V, 0.037 ohm, -10 V, -3 V

ON SEMICONDUCTOR
达林顿双极晶体管

VISHAY
晶体管, MOSFET, P沟道, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV

VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 40 V, 0.042 ohm, 10 V, 1.5 V

VISHAY
晶体管, MOSFET, P沟道, 8.6 A, -60 V, 0.0115 ohm, -10 V, -3 V

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.6 A, 30 V, 100 mohm, 10 V, 1.7 V

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 13 A, 100 V, 130 mohm, 10 V, 3 V

ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 25 hFE

INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00188 ohm, 10 V, 3 V

NEXPERIA
双路场效应管, MOSFET, N和P沟道, 800 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV

ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 1.5 W, 600 mA, 35 hFE

ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -60 V, 200 MHz, 1.5 W, -600 mA, 50 hFE

MULTICOMP
双极晶体管

ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 25 hFE

NEXPERIA
单晶体管 双极, NPN, PNP, 40 V, 300 MHz, 360 mW, 200 mA, 100 hFE

ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V