
VISHAY
晶体管, MOSFET, N沟道, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V

VISHAY
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.021 ohm, -10 V, -3 V

VISHAY
晶体管, MOSFET, P沟道, 50 A, -20 V, 0.0025 ohm, -10 V, -600 mV

VISHAY
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0014 ohm, 10 V, 3.4 V

VISHAY
晶体管, MOSFET, N沟道, 29 A, 150 V, 0.0285 ohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, N沟道, 95 A, 100 V, 0.004 ohm, 10 V, 3.4 V

VISHAY
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0024 ohm, 10 V, 3.4 V

VISHAY
晶体管, MOSFET, N沟道, 34.4 A, 200 V, 0.0285 ohm, 10 V, 2 V

VISHAY
晶体管, MOSFET, N沟道, 34.4 A, 200 V, 0.0285 ohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, N沟道, 24.2 A, 250 V, 0.052 ohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0055 ohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0073 ohm, 10 V, 2.2 V

ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率

ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.19 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE

VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.02 ohm, -4.5 V, -1 V

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.19 ohm, -10 V, -2.6 V

ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -2.5 A, -60 V, 72 mohm, -10 V, -3 V

TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 22 A, 12 V, 0.0075 ohm, 4.5 V, 800 mV

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 525 V, 0.41 ohm, 10 V, 3.75 V