VISHAY

晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.5 ohm, -10 V, -2 V

NEXPERIA

单晶体管 双极, NPN, 45 V, 100 MHz, 900 mW, 500 mA, 160 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.8 V

NEXPERIA

单晶体管 双极, PNP, 80 V, 145 MHz, 650 mW, 1 A, 100 hFE

INFINEON

晶体管, MOSFET, N沟道, 240 A, 60 V, 0.00115 ohm, 10 V, 3.7 V

VISHAY

晶体管, MOSFET, 沟槽式FET, P沟道, -18 A, -40 V, 0.021 ohm, -10 V, -3 V

VISHAY

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0032 ohm, 10 V, 4 V

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0041 ohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 55V, 17A, IPAK

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 40 A, 200 V, 0.038 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0023 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR

MOSFET Transistor, N Channel, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V

NEXPERIA

晶体管, MOSFET, N沟道, 28.1 A, 100 V, 30.8 mohm, 10 V, 3 V

NEXPERIA

晶体管, MOSFET, N沟道, 90 A, 40 V, 4.4 mohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

双极性晶体管, N 通道, 600V

NEXPERIA

晶体管, MOSFET, N沟道, 58 A, 100 V, 0.011 ohm, 10 V, 3 V

NEXPERIA

晶体管, MOSFET, N沟道, 350 mA, 60 V, 1 ohm, 10 V, 1.75 V

INFINEON

双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 3 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 50 A, 40 V, 0.0048 ohm, 10 V, 3 V

NEXPERIA

双极晶体管阵列, PNP, -45 V, 300 mW, -100 mA, 290 hFE, SOT-666

INFINEON

双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0031 ohm, 10 V, 2.32 V

INFINEON

晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0025 ohm, 10 V, 2.2 V

INFINEON

晶体管, MOSFET, N沟道, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 V

INFINEON

晶体管, MOSFET, N沟道, 33 A, 150 V, 0.0345 ohm, 10 V, 5 V