
ON SEMICONDUCTOR
双极晶体管

VISHAY
双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.32 ohm, 4.5 V, 1.5 V

ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 40 hFE

ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 50 MHz, 225 mW, -500 mA, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V

INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0018 ohm, 10 V, 2 V

ON SEMICONDUCTOR
单晶体管 双极, PNP, -300 V, 50 MHz, 225 mW, -500 mA, 25 hFE

ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率

NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.7 A, -8 V, 52 mohm, -4.5 V, -1 V

ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 238 mA, 20 V, 1.5 ohm, 4.5 V, 1 V

TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC

ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 45 V, 500 μW, 500 mA, 40 hFE, SC-74

INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 24 A, 100 V, 0.026 ohm, 10 V, 4 V

VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V