NEXPERIA

晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 40 V, 300 MHz, 1 W, 200 mA, 300 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 通用, NPN, 300 V, 50 MHz, 1 W, 200 mA, 40 hFE

VISHAY

场效应管, MOSFET, N沟道, 600V, 33A, TO-263-3

VISHAY

晶体管, MOSFET, N沟道, 150 A, 80 V, 0.0024 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.06 ohm, 10 V, 5.5 V

DIODES INC.

单晶体管 双极, NPN, 75 V, 140 MHz, 1 W, 3 A, 450 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 6.5 A, 30 V, 0.039 ohm, 10 V, 1 V

INFINEON

双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 7.2 A, 30 V, 0.03 ohm, 10 V, 1.6 V

DIODES INC.

单晶体管 双极, PNP, 50 V, 100 MHz, 1 W, -2 A, 300 hFE

INFINEON

双路场效应管, MOSFET, 双P沟道, -9.2 A, -30 V, 0.013 ohm, -10 V, -1.8 V

NEXPERIA

单晶体管 双极, NPN, 30 V, 210 MHz, 500 mW, 3 A, 465 hFE

INFINEON

晶体管, MOSFET, N沟道, 56 A, 60 V, 0.0066 ohm, 10 V, 3.7 V

INFINEON

晶体管, MOSFET, P沟道, 11 A, -30 V, 13.5 mohm, -10 V, -2.5 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 双路 PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率

STMICROELECTRONICS

晶体管, 射频FET, 40 V, 2.5 A, 31.7 W, 1 GHz, PowerSO-10RF

DIODES INC.

单晶体管 双极, PNP, 400 V, 50 MHz, 1 W, 200 mA, 100 hFE

DIODES INC.

单晶体管 双极, NPN, 30 V, 100 MHz, 3 W, 7 A, 200 hFE

STMICROELECTRONICS

单晶体管 双极, PNP, -100 V, 40 W, -3 A, 50 hFE

NEXPERIA

晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率

VISHAY

晶体管, MOSFET, P沟道, -2 A, -20 V, 0.05 ohm, -4.5 V, -400 mV

INFINEON

晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 220 mA, 50 V, 1.6 ohm, 5 V, 600 mV