
INFINEON
晶体管, MOSFET, N沟道, 49 A, 25 V, 0.0007 ohm, 10 V, 1.6 V

DIODES INC.
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 47 kohm, 47 kohm, 1 电阻比率

DIODES INC.
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

ON SEMICONDUCTOR
单晶体管 双极, PNP, -65 V, 100 MHz, 150 mW, -100 mA, 150 hFE

INFINEON
双路场效应管, MOSFET, N和P, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 60 V, 0.092 ohm, 10 V

DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V

DIODES INC.
晶体管, MOSFET, N沟道, 11.7 A, 20 V, 0.0065 ohm, 4.5 V, 1 V

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV

DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 20 V, 0.027 ohm, 10 V, 600 mV

DIODES INC.
双路场效应管, MOSFET, 双N沟道, 180 mA, 60 V, 6 ohm, 10 V, 2 V

DIODES INC.
晶体管, MOSFET, P沟道, -6.9 A, -20 V, 0.02 ohm, -4.5 V, -1 V

DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -3 V

DIODES INC.
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.0043 ohm, -10 V, -3 V

DIODES INC.
晶体管, MOSFET, P沟道, -3.3 A, -40 V, 0.026 ohm, -10 V, -2.2 V

DIODES INC.
晶体管, MOSFET, N沟道, 30 A, 40 V, 0.0092 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 211 A, 30 V, 0.0008 ohm, 10 V, 1.6 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 218 A, 30 V, 0.0009 ohm, 10 V, 1.1 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 151 A, 100 V, 0.0024 ohm, 10 V, 3.2 V