VISHAY

场效应管, MOSFET, P沟道, -40V, -4.4A, SOT-23-3

VISHAY

晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V

DIODES INC.

双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 1 V

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00085 ohm, 10 V, 1.41 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 16 A, 100 V, 0.0437 ohm, 10 V, 2.9 V

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 0.0119 ohm, 8 V, 950 mV

VISHAY

双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0156 ohm, 10 V, 2.8 V

TAIWAN SEMICONDUCTOR

晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.038 ohm, -10 V, -1 V

DIODES INC.

晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V

TEXAS INSTRUMENTS

晶体管, MOSFET, P沟道, -20 A, -20 V, 0.0199 ohm, -4.5 V, -850 mV

DIODES INC.

双路场效应管, MOSFET, AEC-Q101, N和P, 1.03 A, 20 V, 0.3 ohm, 5 V, 900 mV

INFINEON

晶体管, MOSFET, P沟道, -430 mA, -250 V, 3 ohm, -10 V, -1.5 V

DIODES INC.

单晶体管 双极, PNP, 60 V, 120 MHz, 3 W, -5 A, 200 hFE

VISHAY

晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00165 ohm, 10 V, 2 V

ON SEMICONDUCTOR

Dual MOSFET, N and P Channel, 2.6 A, 30 V, 52 mohm, 4.5 V, 900 mV

NEXPERIA

晶体管 双极预偏置/数字, 双路 NPN, 50 V, 500 mA, 1 kohm, 10 kohm

ON SEMICONDUCTOR

达林顿双极晶体管

VISHAY

场效应管, MOSFET, N沟道, 150V, 1.5A, TSOP

NEXPERIA

单晶体管 双极, PNP, -80 V, 145 MHz, 420 mW, -1 A, 63 hFE

NEXPERIA

双极晶体管阵列, NPN, 60 V, 420 mW, 1 A, 500 hFE, SOT-457

INFINEON

晶体管, MOSFET, N沟道, 17 A, 55 V, 75 mohm, 10 V, 4 V

DIODES INC.

单晶体管 双极, NPN, 20 V, 215 MHz, 1.25 W, 4.5 A, 450 hFE

NEXPERIA

晶体管, MOSFET, P沟道, -3.6 A, -20 V, 0.048 ohm, -4.5 V, -650 mV

ON SEMICONDUCTOR

射频双极性晶体管