VISHAY

晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V

VISHAY

场效应管, MOSFET, N沟道

INFINEON

双路场效应管, MOSFET, P沟道, -8 A, -30 V, 0.017 ohm, -10 V, -1.8 V

TOSHIBA

晶体管, MOSFET, AEC-Q101, P沟道, -8 A, -60 V, 0.08 ohm, -10 V, -3 V

VISHAY

场效应管, MOSFET, P沟道, 60V V(BR)DSS

VISHAY

晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.41 ohm, 4.5 V, 900 mV

NEXPERIA

单晶体管 双极, NPN, 400 V, 25 MHz, 730 mW, 1 A, 155 hFE

VISHAY

晶体管, MOSFET, N沟道, 12 A, 8 V, 0.0078 ohm, 4.5 V, 350 mV

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 30 V, 100 MHz, 225 mW, 100 mA, 290 hFE

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 1.5 W, -600 mA, 200 hFE

TEXAS INSTRUMENTS

场效应管, N沟道, 大功率, NEXFET, 25V, 100A, SON-8

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 20 A, 25 V, 4.6 ohm, 4.5 V, 1.4 V

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 2.1 V

DIODES INC.

双路场效应管, MOSFET, 双P沟道, -26 A, -60 V, 0.036 ohm, -10 V, -3 V

DIODES INC.

晶体管, MOSFET, N沟道, 35.8 A, 30 V, 0.0011 ohm, 10 V, 3 V

DIODES INC.

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00125 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 16.8 A, 60 V, 0.05 ohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 12 A, 1.5 V, 88 W, 600 V, TO-252, 3 引脚

INFINEON

功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 1.22 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0045 ohm, 10 V, 2.8 V

INFINEON

晶体管, MOSFET, N沟道, 19 A, 55 V, 0.047 ohm, 10 V, 1.6 V

INFINEON

晶体管, MOSFET, N沟道, 30 A, 55 V, 0.0106 ohm, 10 V, 1.6 V

INFINEON

晶体管, MOSFET, N沟道, 30 A, 55 V, 0.0159 ohm, 10 V, 1.6 V

INFINEON

晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0062 ohm, 10 V, 1.7 V

INFINEON

功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V