TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET?, N沟道, 50 A, 100 V, 0.0121 ohm, 10 V, 3 V

DIODES INC.

单晶体管 双极, NPN, 100 V, 130 MHz, 1.2 W, 4 A, 200 hFE

INFINEON

单晶体管, IGBT, 30 A, 2.4 V, 187 W, 600 V, TO-247, 3 引脚

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 17.5 A, 950 V, 0.275 ohm, 10 V, 4 V

NEXPERIA

双极晶体管阵列, 通用, PNP, 45 V, 200 mW, 100 mA, 290 hFE, SOT-363

WOLFSPEED

功率场效应管, MOSFET, N沟道, 19 A, 1.2 kV, 0.16 ohm, 20 V, 2.6 V

DIODES INC.

单晶体管 双极, NPN, 50 V, 115 MHz, 1.1 W, 4 A, 450 hFE

NEXPERIA

单晶体管 双极, NPN, 300 V, 1.2 W, 100 mA, 40 hFE

ROHM

晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.05 ohm, 10 V, 2.5 V

WOLFSPEED

场效应管, MOSFET, N沟道, 1.7KV, 4.9A, TO-247-3

DIODES INC.

晶体管, MOSFET, 低电压, P沟道, 1.6 A, -30 V, 210 mohm, 10 V, -1 V

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00116 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0017 ohm, 10 V, 3 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 250 V, 8 MHz, 250 W, 40 A, 8 hFE

ROHM

晶体管, MOSFET, P沟道, -6 A, -20 V, 0.0161 ohm, -4.5 V, -1.2 V

ROHM

单晶体管 双极, PNP, 20 V, 120 MHz, 500 mW, 4 A, 82 hFE

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 17 A, 30 V, 0.0055 ohm, 4.5 V, 1.2 V

INFINEON

单晶体管, IGBT, 42 A, 1.65 V, 125 W, 650 V, TO-220, 3 引脚

INFINEON

功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 6 A, 42 V, 0.09 ohm, 10 V, 1.6 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 2.6 A, 52 V, 0.095 ohm, 10 V, 1.5 V

ROHM

晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V

VISHAY

晶体管, MOSFET, N沟道, 100 A, 200 V, 0.0079 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 64 A, 200 V, 0.018 ohm, 10 V, 4 V

ROHM

双路场效应管, MOSFET, N和P沟道, 100 mA, 20 V, 2.5 ohm, 4.5 V, 1 V