ROHM

单晶体管 双极, PNP, -12 V, 260 MHz, 120 mW, -500 mA, 270 hFE

ROHM

单晶体管 双极, NPN, 12 V, 320 MHz, 120 mW, 500 mA, 270 hFE

ROHM

双极晶体管阵列, NPN, 12 V, 150 mW, 500 mA, 270 hFE, SOT-363

ROHM

晶体管, MOSFET, N沟道, 1.5 A, 30 V, 340 mohm, 4.5 V, 1.5 V

ROHM

双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 380 mohm, 10 V, 2.5 V

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 80 V, 1 MHz, 40 W, 4 A, 750 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

ROHM

单晶体管 双极, NPN, 32 V, 150 MHz, 200 mW, 800 mA, 120 hFE

INFINEON

单晶体管, IGBT, 通用, 20 A, 2.05 V, 110 W, 600 V, TO-220, 3 引脚

ROHM

单晶体管 双极, PNP, -50 V, 140 MHz, 200 mW, -150 mA, 120 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0078 ohm, 10 V, 2.8 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.38 ohm, -4.5 V, -1.2 V

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 30 V, 0.0049 ohm, 8 V, 900 mV

INFINEON

晶体管, MOSFET, N沟道, 42 A, 100 V, 0.011 ohm, 10 V, 1 V

VISHAY

场效应管, MOSFET, P沟道, -20V, -60A, POWERPAK SO-8

NEXPERIA

单晶体管 双极, NPN, 30 V, 230 MHz, 300 mW, 2 A, 470 hFE

INFINEON

单晶体管, IGBT, 40 A, 2.4 V, 483 W, 1.2 kV, TO-247, 3 引脚

INFINEON

单晶体管, IGBT, 40 A, 1.65 V, 288 W, 1.35 kV, TO-247, 3 引脚

INFINEON

单晶体管, IGBT, 50 A, 1.6 V, 305 W, 650 V, TO-247, 3 引脚

INFINEON

单晶体管, IGBT, 通用, 80 A, 2 V, 428 W, 600 V, TO-247, 3 引脚

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, NPN, 250 V, 30 MHz, 200 W, 15 A, 45 hFE

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 40A

INFINEON

功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 100 kohm, 100 kohm