STMICROELECTRONICS

晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V

ROHM

单晶体管 双极, NPN, 50 V, 180 MHz, 200 mW, 150 mA, 120 hFE

ROHM

单晶体管 双极, NPN, 80 V, 120 MHz, 200 mW, 500 mA, 120 hFE

MULTICOMP

单晶体管 双极, PNP, -80 V, 125 MHz, 500 mW, -1 A, 250 hFE

ROHM

晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 4.7 kohm

ROHM

晶体管 双极预偏置/数字, NPN, 单路NPN, 50 V, 100 mA, 4.7 kohm

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 100V, 38A, TO-3

INFINEON

晶体管, MOSFET, N沟道, 83 A, 150 V, 15 mohm, 10 V, 5 V

INFINEON

单晶体管, IGBT, 19 A, 2.2 V, 52 W, 600 V, TO-220FP, 3 引脚

ROHM

双路场效应管, MOSFET, N和P沟道, 2 A, 100 V, 0.24 ohm, 10 V, 2.5 V

ROHM

晶体管, MOSFET, P沟道, -1.5 A, -100 V, 0.35 ohm, -10 V, -2.5 V

ROHM

晶体管 双极预偏置/数字, PNP, 双路 PNP, -50 V, -100 mA, 4.7 kohm

ROHM

晶体管 双极预偏置/数字, NPN, 双路 NPN, 50 V, 100 mA, 10 kohm

DIODES INC.

单晶体管 双极, NPN, 75 V, 140 MHz, 1.6 W, 3 A, 450 hFE

DIODES INC.

单晶体管 双极, NPN, 45 V, 150 MHz, 2 W, 3 A, 500 hFE

ROHM

晶体管, MOSFET, N沟道, 2.5 A, 30 V, 70 mohm, 10 V, 2.5 V

ROHM

功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 30 A, 500 V, 200 mohm, 10 V, 5 V

ROHM

双路场效应管, MOSFET, N和P沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V

INFINEON

晶体管, MOSFET, N沟道, 350 A, 40 V, 0.00135 ohm, 20 V, 4 V

INFINEON

单晶体管, IGBT, 57 A, 1.47 V, 200 W, 1.2 kV, TO-247AC, 3 引脚

INFINEON

单晶体管, IGBT, 57 A, 1.75 V, 200 mW, 1.2 kV, TO-247AC, 3 引脚

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 30 A, 2.7 V, 85 W, 600 V, Module

INFINEON

晶体管, MOSFET, N沟道, 41 A, 150 V, 45 mohm, 10 V, 5.5 V