ROHM

晶体管, MOSFET, P沟道, -5 A, -12 V, 0.019 ohm, -4.5 V, -300 mV

INFINEON

晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0026 ohm, 10 V, 3 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 260 VDC, 30 MHz, 200 W, 15 A, 45 hFE

STMICROELECTRONICS

晶体管, 射频FET, 65 V, 1 A, 20 W, 925 MHz, 960 MHz, SOIC

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 48 A, 500 V, 0.089 ohm, 10 V, 5 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V

ROHM

单晶体管 双极, NPN, 120 V, 140 MHz, 200 mW, 50 mA, 180 hFE

INFINEON

单晶体管, IGBT, 220 A, 2 V, 1.15 kW, 1.2 kV, TO-274AA, 3 引脚

ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 2 A, 1.5 kV, 10 ohm, 10 V, 3.5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 34 A, 650 V, 0.1 ohm, 10 V, 5 V

ROHM

功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 5 V

ROHM

晶体管, MOSFET, P沟道, -3 A, -20 V, 0.055 ohm, -4.5 V, -2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 13 A, 1 kV, 700 mohm, 10 V, 3.75 V

DIODES INC.

晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.5 ohm, 10 V, 3 V

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 100 A, 2.4 V, 310 W, 600 V, Module

IXYS SEMICONDUCTOR

晶体管, IGBT阵列&模块, N沟道, 100 A, 2.3 V, 450 W, 1.2 kV, SOT-227B

INFINEON

晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0022 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV

IXYS SEMICONDUCTOR

单晶体管, IGBT, 82 A, 3.2 V, 1.25 kW, 1.2 kV, TO-247AD, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 24 A, 200 V, 0.064 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 70 A, 300 V, 0.0255 ohm, 10 V, 3 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 15 V, 5 V

ROHM

功率场效应管, MOSFET, N沟道, 31 A, 1.2 kV, 0.08 ohm, 18 V, 5.6 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 120 A, 250 V, 24 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 64 A, 500 V, 85 mohm, 10 V, 5.5 V