IXYS SEMICONDUCTOR

单晶体管, IGBT, 隔离, 26 A, 3.5 V, 200 W, 1.7 kV, TO-247AD, 3 引脚

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 96 A, 200 V, 24 mohm, 10 V, 5 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 40 A, 600 V, 0.065 ohm, 10 V, 4 V

ROHM

晶体管 双极预偏置/数字, 双路, 双路 PNP, 50 V, -100 mA, 10 kohm

ROHM

晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 10 kohm

ROHM

晶体管 双极预偏置/数字, 数字式, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 17 A, 650 V, 0.15 ohm, 10 V, 4 V

ROHM

晶体管 双极预偏置/数字, 双路 PNP, 50 V, -100 mA, 10 kohm, 10 kohm

NEXPERIA

双极晶体管阵列, 双NPN, 45 V, 220 mW, 100 mA, 200 hFE, SOT-363

ON SEMICONDUCTOR

场效应管, MOSFET, P沟道, -50V, 130mA, SOT-23

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 1.5 W, 600 mA, 35 hFE

NEXPERIA

单晶体管 双极, NPN, 80 V, 180 MHz, 650 mW, 1 A, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 2.6 A, -12 V, 0.03 ohm, -4.5 V, -600 mV

NEXPERIA

单晶体管 双极, NPN, 45 V, 180 MHz, 650 mW, 1 A, 63 hFE

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 500 mW, -600 mA, 200 hFE

ROHM

晶体管 双极预偏置/数字, NPN, 单路NPN, 50 V, 100 mA, 1 kohm, 10 kohm, 0.1 电阻比率

INFINEON

晶体管, MOSFET, N沟道, 43 A, 150 V, 42 mohm, 10 V, 4 V

NTE ELECTRONICS

场效应管, MOSFET, N沟道, 1KV, 3.1A, TO-220

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, -20 V, 60 MHz, 1.5 W, -1 A, 50 hFE

INFINEON

晶体管, IGBT阵列&模块, N沟道, 25 A, 1.85 V, 205 W, 1.2 kV, Module

INTERNATIONAL RECTIFIER

晶体管, IGBT

INFINEON

单晶体管, IGBT, 40 A, 3.2 V, 300 W, 1.2 kV, TO-247AD, 3 引脚

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, Q3-Class, N沟道, 24 A, 1 kV, 0.44 ohm, 10 V, 6.5 V

STMICROELECTRONICS

单晶体管 双极, PNP, -300 V, 50 MHz, 350 mW, -500 mA, 40 hFE