NEXPERIA

单晶体管 双极, NPN, 60 V, 180 MHz, 640 mW, 1 A, 63 hFE

NEXPERIA

单晶体管 双极, PNP, -80 V, 145 MHz, 500 mW, -1 A, 63 hFE

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 30V, 6.3A, SOT-223, 整卷

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.092 ohm, 10 V, 2.1 V

ON SEMICONDUCTOR/FAIRCHILD

双极性晶体管, NPN, 40V, SOT-223, 整卷

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 232 A, 1.8 V, 1.2 kV, Module

SEMIKRON

晶体管, IGBT阵列&模块, 双N沟道, 231 A, 1.75 V, 1.2 kV, Module

NEXPERIA

单晶体管 双极, PNP, -80 V, 200 MHz, 1.25 W, -1 A, 2000 hFE

NTE ELECTRONICS

单晶体管 双极, PNP, -80 V, 625 mW, -800 mA, 50 hFE

ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, -300 V, 50 MHz, 1.5 W, -50 mA, 40 hFE

VISHAY

场效应管, MOSFET, P沟道, -40V, -4.4A, SOT-23-3, 整卷

NEXPERIA

单晶体管 双极, NPN, 20 V, 170 MHz, 500 mW, 1 A, 160 hFE

NEXPERIA

单晶体管 双极, NPN, 20 V, 170 MHz, 625 mW, 1 A, 160 hFE

INFINEON

晶体管, IGBT阵列&模块, N沟道, 300 A, 1.55 V, 940 W, 650 V, Module

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -2.4 A, -20 V, 55 mohm, -4.5 V, -1 V

INFINEON

晶体管, IGBT阵列&模块, N沟道, 600 A, 1.75 V, 4.05 kW, 1.2 kV, Module

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 160 V, 225 mW, 600 mA, 30 hFE

NEXPERIA

晶体管, MOSFET, P沟道, -4.1 A, -20 V, 0.07 ohm, -4.5 V, -1 V

VISHAY

场效应管, MOSFET, N沟道, 150V, 0.068Ω, 2.7A

VISHAY

场效应管, MOSFET, 双N沟道, 40V, 60A, 整卷

NEXPERIA

单晶体管 双极, 通用, PNP, -45 V, 80 MHz, 250 mW, -500 mA, 100 hFE

ON SEMICONDUCTOR

单晶体管 双极, PNP, -65 V, 100 MHz, 150 mW, -100 mA, 150 hFE

NEXPERIA

单晶体管 双极, 通用, NPN, 45 V, 250 MHz, 250 mW, 100 mA, 180 hFE

NEXPERIA

双极性晶体管, NPN, 40V, 200MA, 3-SOT-23, 整卷