ON SEMICONDUCTOR

单晶体管 双极, 通用, PNP, 80 V, 3 MHz, 30 W, 1 A, 10 hFE

INFINEON

晶体管, MOSFET, N沟道, 19 A, 100 V, 0.053 ohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD

双极晶体管阵列, PNP, -60 V, 1 W, -600 mA, 50 hFE, SOIC

TEXAS INSTRUMENTS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, TSSOP

TEXAS INSTRUMENTS

晶体管, MOSFET, P沟道, -5.4 A, -12 V, 0.029 ohm, -4.5 V, -650 mV

TEXAS INSTRUMENTS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC

STMICROELECTRONICS

单晶体管 双极, PNP, 45 V, 36 W, 4 A, 130 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -49 A, -30 V, 0.0027 ohm, -10 V, -1.7 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 300 V, 15 W, 500 mA, 30 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -60 V, 200 MHz, 350 mW, -800 mA, 100 hFE

INFINEON

晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -550 mV

INFINEON

双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 68 A, 80 V, 0.0076 ohm, 10 V, 4.9 V

INFINEON

晶体管, MOSFET, N沟道, 17 A, 100 V, 0.09 ohm, 10 V, 4 V

INFINEON

晶体管 双极-射频, NPN, 6 V, 14 GHz, 380 mW, 80 mA, 90 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 300 mA, 60 V, 1 ohm, 10 V, 1.6 V

VISHAY

晶体管, MOSFET, P沟道, 1.6 A, -60 V, 280 mohm, -10 V, -4 V

INFINEON

双路场效应管, MOSFET, 双P沟道, -9 A, -20 V, 0.018 ohm, -4.5 V, -1 V

INFINEON

晶体管, MOSFET, N沟道, 56 A, 30 V, 12 mohm, 10 V, 1 V

MULTICOMP

单晶体管 双极, NPN, 30 V, 250 MHz, 625 mW, 100 mA, 500 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 1.1 A, -30 V, 300 mohm, -10 V, -2 V

INFINEON

晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0033 ohm, 10 V, 2 V

NEXPERIA

双路场效应管, MOSFET, 双P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV

INFINEON

晶体管, MOSFET, N沟道, 35 A, 150 V, 29 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, P沟道, -190 mA, -60 V, 4 ohm, -4.5 V, -3 V