
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V

ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -14 A, -40 V, 36 mohm, -10 V, -1.6 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.04 ohm, 4.5 V, 700 mV

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 1 V

ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -300 V, 10 MHz, 15 W, -500 mA, 30 hFE

ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 40 V, 250 MHz, 150 mW, 200 mA, 250 hFE

NEXPERIA
单晶体管 双极, PNP, -400 V, 30 MHz, 730 mW, -500 mA, 65 hFE

NEXPERIA
单晶体管 双极, PNP, -30 V, 130 MHz, 700 mW, -5.3 A, 400 hFE

NEXPERIA
单晶体管 双极, PNP, -60 V, 150 MHz, 390 mW, -2.7 A, 300 hFE

NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm

NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm

VISHAY
双路场效应管, MOSFET, N和P沟道, 430 mA, 8 V, 0.5 ohm, 4.5 V, 4.5 V

VISHAY
晶体管, MOSFET, P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -3 V

VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0021 ohm, -10 V, -2.3 V