VISHAY

晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0076 ohm, -10 V, -2.5 V

VISHAY

晶体管, MOSFET, P沟道, -45 A, -30 V, 0.0072 ohm, -10 V, -2.5 V

VISHAY

晶体管, MOSFET, P沟道, -110 A, -60 V, 0.0065 ohm, -10 V, -3 V

TEXAS INSTRUMENTS

双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC

NTE ELECTRONICS

小信号双极性晶体管

FUJI ELECTRIC

晶体管, IGBT阵列&模块, 双N沟道, 2.4 kA, 2.47 V, 9.76 kW, 1.7 kV, Module

MCM DISTRIBUTED BY MCM

CHARGER, BATTERY FASTMAC W/USB ADAPTOR

DIODES INC.

单晶体管 双极, PNP, 12 V, 300 MHz, 300 mW, 500 mA, 270 hFE

DIODES INC.

单晶体管 双极, PNP, 12 V, 180 MHz, 900 mW, 1.5 A, 270 hFE

DIODES INC.

单晶体管 双极, PNP, 12 V, 180 MHz, 900 mW, 1.5 A, 270 hFE

DIODES INC.

单晶体管 双极, PNP, 30 V, 200 MHz, 900 mW, 1.5 A, 270 hFE

DIODES INC.

单晶体管 双极, PNP, 30 V, 200 MHz, 900 mW, 1.5 A, 270 hFE

DIODES INC.

单晶体管 双极, NPN, 12 V, 260 MHz, 300 mW, 500 mA, 270 hFE

DIODES INC.

单晶体管 双极, NPN, 30 V, 270 MHz, 300 mW, 500 mA, 270 hFE

DIODES INC.

单晶体管 双极, NPN, 12 V, 170 MHz, 900 mW, 1 A, 270 hFE

DIODES INC.

单晶体管 双极, NPN, 12 V, 170 MHz, 900 mW, 1.5 A, 270 hFE

DIODES INC.

单晶体管 双极, NPN, 12 V, 170 MHz, 900 mW, 1.5 A, 270 hFE

DIODES INC.

单晶体管 双极, NPN, 30 V, 240 MHz, 900 mW, 1.5 A, 270 hFE

FUJI ELECTRIC

晶体管, IGBT阵列&模块, 2件, N沟道, 150 A, 2.6 V, 780 W, 1.2 kV, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 150 A, 2.35 V, 500 W, 600 V, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 150 A, 1.85 V, 1.07 kW, 1.2 kV, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 200 A, 2.05 V, 1.04 kW, 1.2 kV, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 200 A, 1.75 V, 1.5 kW, 1.2 kV, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 400 A, 2.05 V, 2.045 kW, 1.2 kV, Module

STMICROELECTRONICS

单晶体管 双极, 通用, NPN, 80 V, 70 MHz, 800 mW, 150 mA, 80 hFE