DIODES INC.

单晶体管 双极, PNP, -150 V, 300 MHz, 300 mW, -600 mA, 60 hFE

INFINEON

晶体管, MOSFET, P沟道, -6 A, -20 V, 0.029 ohm, -4.5 V, -900 mV

INFINEON

晶体管, MOSFET, N沟道, 40 A, 100 V, 0.014 ohm, 10 V, 2.8 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0016 ohm, 10 V, 2 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 80 V, 150 MHz, 225 mW, 500 mA, 150 hFE

VISHAY

晶体管, MOSFET, P沟道, -350 mA, -20 V, 0.8 ohm, -1.8 V, -450 mV

MULTICOMP

场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-23-3

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -300 V, 50 MHz, 350 mW, -500 mA, 25 hFE

VISHAY

晶体管, MOSFET, N沟道, 2.7 A, 150 V, 0.068 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 40 A, 100 V, 0.013 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD

双极性晶体管, NPN, 45V, TO-92

NEXPERIA

晶体管, MOSFET, N沟道, 56 A, 60 V, 0.0103 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR

单晶体管 双极, 双NPN, 45 V, 100 MHz, 380 mW, 100 mA, 270 hFE

MULTICOMP

单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 40 W, 3 A, 10 hFE

WEEN SEMICONDUCTOR

单晶体管 双极, NPN, 400 V, 2.1 W, 1 A, 7.5 hFE

VISHAY

场效应管, MOSFET, P沟道, -150V, 690mA, TO-236

DIODES INC.

晶体管, MOSFET, N沟道, 200 mA, 100 V, 10 ohm, 10 V, 2.4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, NPN

NEXPERIA

双路场效应管, MOSFET, 双N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV

INFINEON

晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V

VISHAY

双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 0.33 ohm, 4.5 V, 400 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.6 ohm, 5 V, 1.76 V

INFINEON

晶体管, MOSFET, N沟道, 20 A, 60 V, 0.005 ohm, 10 V, 1.7 V

INFINEON

场效应管, MOSFET, 双路, N沟道, 20V, 0.88A, SOT-363-6