STMICROELECTRONICS

单晶体管 双极, NPN, 60 V, 500 mW, 1 A, 250 hFE

STMICROELECTRONICS

单晶体管 双极, NPN, 60 V, 500 mW, 1 A, 250 hFE

STMICROELECTRONICS

单晶体管 双极, 通用, NPN, 15 V, 500 mW, 2 A, 280 hFE

STMICROELECTRONICS

单晶体管 双极, NPN, 30 V, 500 mW, 1.5 A, 330 hFE

STMICROELECTRONICS

单晶体管 双极, NPN, 30 V, 500 mW, 1.5 A, 330 hFE

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 75 A, 1.85 V, 385 W, 1.2 kV, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 100 A, 1.6 V, 215 W, 600 V, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 25 A, 1.85 V, 170 W, 1.2 kV, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, 7件, N沟道, 35 A, 2.1 V, 240 W, 1.2 kV, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 35 A, 1.85 V, 210 W, 1.2 kV, Module

FUJI ELECTRIC

晶体管, IGBT阵列&模块, N沟道, 50 A, 1.85 V, 280 W, 1.2 kV, Module

SEMELAB

晶体管, MOSFET, N沟道, 8 A, 160 V

SEMELAB

双路场效应管, MOSFET, N和P沟道, 8 A, 160 V

SEMELAB

晶体管, MOSFET, P沟道, -8 A, -160 V

SEMELAB

晶体管, MOSFET, N沟道, 16 A, 160 V

SEMELAB

晶体管, MOSFET, N沟道, 16 A, 200 V

SEMELAB

晶体管, MOSFET, 音频, N沟道, 16 A, 200 V

SEMELAB

晶体管, MOSFET, 音频, P沟道, -16 A, -160 V

SEMELAB

晶体管, MOSFET, P沟道, -16 A, -160 V

SEMELAB

晶体管, MOSFET, 音频, P沟道, -16 A, -200 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, N沟道, 9 A, 100 V, 0.16 ohm, 10 V, 1 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, N沟道, 185 A, 30 V, 0.00159 ohm, 10 V, 1 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, N沟道, 5 A, 30 V, 0.035 ohm, 4.5 V, 300 mV

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, P沟道, -4 A, -16 V, 0.06 ohm, -4.5 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, N沟道, 3 A, 60 V, 0.07 ohm, 10 V, 1.55 V