ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, N沟道, 4.7 A, 30 V, 0.042 ohm, 10 V, 1 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, N沟道, 500 mA, 30 V, 1.5 ohm, 4 V, 400 mV

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, P沟道, -3.1 A, -30 V, 0.097 ohm, -4.5 V, -1 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, P沟道, -3.1 A, -40 V, 0.09 ohm, -10 V, -1 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, N沟道, 2.5 A, 20 V, 0.09 ohm, 4.5 V, 250 mV

ADVANCED POWER ELECTRONICS CORP

双路场效应管, MOSFET, N和P沟道, 3.3 A, 30 V, 0.072 ohm, 10 V, 1 V

ADVANCED POWER ELECTRONICS CORP

功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 5 ohm, 10 V, 2 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, N沟道, 28 A, 30 V, 0.025 ohm, 10 V, 1 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, P沟道, -40 A, -30 V, 0.02 ohm, -10 V, -1 V

ADVANCED POWER ELECTRONICS CORP

双路场效应管, MOSFET, N和P沟道, 15 A, 40 V, 0.028 ohm, 10 V, 1 V

ADVANCED POWER ELECTRONICS CORP

双路场效应管, MOSFET, N和P沟道, 9 A, 60 V, 0.072 ohm, 10 V, 1 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, N沟道, 45 A, 30 V, 0.012 ohm, 10 V, 1 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, N沟道, 60 A, 30 V, 0.009 ohm, 10 V, 1 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, P沟道, -6 A, -30 V, 0.05 ohm, -10 V, -1 V

ADVANCED POWER ELECTRONICS CORP

晶体管, MOSFET, N沟道, 32 A, 40 V, 0.02 ohm, 10 V, 1 V

MICROSEMI

场效应管, MOSFET, N沟道, 500V, 15A, TO-220

BROADCOM LIMITED

晶体管 双极-射频, NPN, 12 V, 10 GHz, 225 mW, 50 mA, 150 hFE

BROADCOM LIMITED

晶体管, 射频FET, 5.5 V, 65 mA, 725 mW, 450 MHz, 10 GHz, SOT-343

BROADCOM LIMITED

晶体管, 射频FET, 高线性度, 7 V, 300 mA, 1 W, 50 MHz, 6 GHz, SOT-89

BROADCOM LIMITED

晶体管, 射频FET, 5 V, 120 mA, 725 mW, 450 MHz, 6 GHz, SOT-343

BROADCOM LIMITED

晶体管, 射频FET, 5 V, 100 mA, 270 mW, 450 MHz, 6 GHz, SOT-343

BROADCOM LIMITED

晶体管, 射频FET, 硅, 3 V, 500 mA, 500 mW, 450 MHz, 6 GHz, SOT-343

INFINEON

场效应管, MOSFET, N沟道, 车用, 24V, 240A, TO-262

INFINEON

晶体管, MOSFET, N沟道, 160 A, 40 V, 2.7 mohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 195 A, 40 V, 1.5 mohm, 10 V, 2 V