MICROCHIP

晶体管, MOSFET, N沟道, 120 mA, 400 V, 17 ohm, 0 V

INFINEON

晶体管, MOSFET, N沟道, 375 A, 100 V, 0.0028 ohm, 10 V, 2.7 V

INFINEON

晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0094 ohm, 10 V, 4.9 V

INFINEON

晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0033 ohm, 10 V, 1.8 V

INFINEON

晶体管, MOSFET, N沟道, 8.5 A, 25 V, 0.01 ohm, 10 V, 1.8 V

INFINEON

晶体管, MOSFET, N沟道, 22 A, 20 V, 0.0094 ohm, 4.5 V, 800 mV

DIODES INC.

晶体管, MOSFET, P沟道, 8.2 A, -60 V, 85 mohm, -10 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 100 MHz, 625 mW, 800 mA, 170 hFE

INFINEON

晶体管, MOSFET, N沟道, 9.3 A, 80 V, 0.0115 ohm, 10 V, 4 V

DIODES INC.

单晶体管 双极, NPN, 300 V, 80 MHz, 1.2 W, 3 A, 200 hFE

NEXPERIA

晶体管, MOSFET, P沟道, -1.5 A, -40 V, 0.18 ohm, -10 V, -1.7 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0086 ohm, 10 V, 2.25 V

STMICROELECTRONICS

单晶体管 双极, NPN, 100 V, 40 W, 3 A, 50 hFE

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率

INFINEON

晶体管, MOSFET, N沟道, 375 A, 100 V, 0.0028 ohm, 10 V, 2.7 V

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00075 ohm, 10 V, 1.41 V

INFINEON

晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0069 ohm, 10 V, 2.35 V

INFINEON

晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0023 ohm, 10 V, 1.8 V

INFINEON

晶体管, MOSFET, AEC-Q101, N沟道, 187 A, 40 V, 0.0016 ohm, 10 V, 3.9 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 15 V, 250 MHz, 200 mW, 700 mA, 200 hFE

VISHAY

晶体管, MOSFET, N沟道, 600 mA, 200 V, 1.5 ohm, 10 V, 4 V

NEXPERIA

双路场效应管, MOSFET, 双N沟道, 260 mA, 60 V, 2.2 ohm, 10 V, 1.6 V

MULTICOMP

单晶体管 双极, 达林顿, NPN, 80 V, 65 W, 5 A, 1000 hFE

INFINEON

双路场效应管, MOSFET, 双N沟道, 3.4 A, 20 V, 0.033 ohm, 4.5 V, 800 mV