INFINEON

晶体管, MOSFET, P沟道, -9.2 A, -30 V, 0.0156 ohm, -10 V, -1.8 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道 通道, 40V, 100A, PQFN-8

NEXPERIA

晶体管 双极-射频, PNP, -32 V, 100 MHz, 250 mW, -100 mA, 630 hFE

INFINEON

晶体管, MOSFET, N沟道, 5 A, 30 V, 22 mohm, 4.5 V, 800 mV

INFINEON

晶体管, MOSFET, N沟道, 86 A, 30 V, 0.004 ohm, 10 V, 1.8 V

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

INFINEON

晶体管, MOSFET, N沟道, 180 A, 25 V, 0.0012 ohm, 10 V, 1.9 V

INFINEON

晶体管, MOSFET, P沟道, -16 A, -12 V, 0.007 ohm, -4.5 V, -900 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 5 A, -30 V, 65 mohm, -10 V, 1.6 V

INFINEON

双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0018 ohm, 10 V, 1.8 V

INFINEON

晶体管, MOSFET, N沟道+肖特基, 160 A, 25 V, 0.0014 ohm, 10 V, 1.8 V

INFINEON

场效应管, MOSFET, N沟道 通道, 25V, 30A, PQFN-8

INFINEON

晶体管, MOSFET, N沟道, 375 A, 40 V, 0.0007 ohm, 10 V, 2.8 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 达林顿, NPN, 100 V, 65 W, 5 A, 1000 hFE

ON SEMICONDUCTOR

晶体管, JFET, JFET, -25 V, 24 mA, 60 mA, -6.5 V, SOT-23, JFET

VISHAY

晶体管, MOSFET, N沟道, 14 A, 20 V, 0.0041 ohm, 10 V, 2 V

VISHAY

晶体管, JFET, JFET, 30 V, -20 mA, -135 mA, 10 V, TO-236, JFET

VISHAY

晶体管, MOSFET, P沟道, -18.3 A, -60 V, 0.048 ohm, -10 V, -3 V

TEXAS INSTRUMENTS

晶体管, MOSFET, P沟道, -1.8 A, -12 V, 0.097 ohm, -4.5 V, -650 mV

NEXPERIA

单晶体管 双极, 通用, PNP, 45 V, 200 mW, 100 mA, 420 hFE

INFINEON

晶体管, MOSFET, P沟道, -4.3 A, -12 V, 0.05 ohm, -4.5 V, -550 mV

INFINEON

晶体管, MOSFET, N沟道, 8.3 A, 30 V, 0.017 ohm, 4.5 V, 1 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.0137 ohm, 10 V, 4 V

ON SEMICONDUCTOR

Dual MOSFET, Dual N Channel, 295 mA, 60 V, 1 ohm, 10 V, 1.7 V