产品分类：晶体管,
ROHM
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)ROHM
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 50 A, 1.45 V, 225 W, 600 V, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 30 A, 1.55 V, 165 W, 600 V, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, 四路, N沟道, 75 A, 3.2 V, 500 W, 1.2 kV, Module
(EN)
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 100 mA, 30 V, 2 ohm, 4 V, 1 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 6.5 A, 33 V, 0.015 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 140 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 36 A, 600 V, 0.081 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.6 A, 650 V, 950 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.33 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.062 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 72.8 A, 600 V, 0.0287 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 320 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10.8 A, 600 V, 0.255 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.244 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.17 ohm, 10 V, 2.5 V
(EN)
