INFINEON

双路场效应管, MOSFET, 双P沟道, 4.2 A, -20 V, 0.049 ohm, -4.5 V, -700 mV

TOSHIBA

晶体管, MOSFET, P沟道, -34 A, -30 V, 0.0037 ohm, -10 V, -800 mV

NEXPERIA

晶体管, MOSFET, 沟, P沟道, -1.2 A, -20 V, 0.17 ohm, -4.5 V, -700 mV

VISHAY

晶体管, MOSFET, N沟道, 21.4 A, 60 V, 0.025 ohm, 10 V, 3 V

NEXPERIA

晶体管, MOSFET, 沟, N沟道, 265 mA, 60 V, 2.1 ohm, 10 V, 1 V

VISHAY

晶体管, N沟道

INFINEON

晶体管, MOSFET, N沟道, 18 A, 100 V, 0.038 ohm, 10 V, 2.7 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 3.8 ohm, 10 V, 3.75 V

INFINEON

晶体管, MOSFET, P沟道, -9.8 A, -30 V, 0.0136 ohm, -10 V, -1.9 V

NEXPERIA

单晶体管 双极, 通用, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 220 hFE

INFINEON

晶体管, MOSFET, N沟道, 81 A, 20 V, 0.0032 ohm, 10 V, 2.45 V

DIODES INC.

晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 1.6 V

INFINEON

场效应管, MOSFET

INFINEON

双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 25 V, 100 MHz, 310 mW, 800 mA, 100 hFE

VISHAY

晶体管, MOSFET, N沟道, 50 A, 50 V, 0.009 ohm, 10 V, 2 V

MULTICOMP

单晶体管 双极, 达林顿, NPN, 60 V, 50 W, 2 A, 1000 hFE

VISHAY

MOSFET, DUAL P CHANNEL, -40V, -6A, POWERPAK 1212-8

INFINEON

双路场效应管, MOSFET, 双N沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V

VISHAY

场效应管, MOSFET, N沟道, ESD保护

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 47 kohm, 47 kohm

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.078 ohm, 4.5 V, 1 V

INTERNATIONAL RECTIFIER

双路场效应管, N/P通道, MOSFET, 20V, SOIC

VISHAY

晶体管, MOSFET, N沟道, 40 A, 30 V, 0.00205 ohm, 10 V, 1.1 V

INTERNATIONAL RECTIFIER

双路场效应管, N/P通道, MOSFET, 30V, SOIC