INFINEON

双路场效应管, MOSFET, 双P沟道, -1.7 A, -20 V, 0.27 ohm, -4.5 V, -700 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -1 A, -20 V, 300 mohm, -4.5 V, -600 mV

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 达林顿, NPN, 100 V, 200 MHz, 1 W, 1.5 A, 1000 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 57 A, 30 V, 4.7 mohm, 11.5 V, 2.5 V

NEXPERIA

单晶体管 双极, NPN, 15 V, 420 MHz, 150 mW, 500 mA, 90 hFE

NEXPERIA

单晶体管 双极, PNP, -300 V, 250 mW, -50 mA, 50 hFE

INFINEON

晶体管, MOSFET, N沟道, 58 A, 30 V, 0.006 ohm, 10 V, 1.8 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 60 V, 65 W, 1.5 A, 40 hFE

ON SEMICONDUCTOR

单晶体管 双极, PNP, -50 V, 690 MHz, 200 mW, -400 mA, 200 hFE

NEXPERIA

晶体管, MOSFET, 带沟, N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV

INFINEON

晶体管, MOSFET, P沟道, -15 A, -30 V, 5.9 mohm, -10 V, -1.8 V

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, PNP, -65 V, 100 MHz, 225 mW, -100 mA, 220 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, NPN, 45V, SOT-23

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 1.4 A, 30 V, 250 mohm, 10 V, 2.1 V

NEXPERIA

晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.03 ohm, -4.5 V, -700 mV

VISHAY

晶体管, MOSFET, P沟道, -3.1 A, -20 V, 0.11 ohm, -2.5 V, -400 mV

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -40V, 0.011Ω, -10.8A, SOIC-8

INFINEON

晶体管, MOSFET, N沟道, 9.4 A, 40 V, 0.0117 ohm, 10 V, 2 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V

INFINEON

晶体管, MOSFET, AEC-Q101, N沟道, 160 A, 75 V, 0.0018 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, P沟道, 6.2 A, -40 V, 41 mohm, -10 V, -3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 双NPN, 45 V, 210 mW, 100 mA, 200 hFE

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 100V, 17A, TO-220AB

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.021 ohm, 10 V, 1.9 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 5.1 A, 55 V, 0.043 ohm, 10 V, 3 V