INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 23A, TO-247AC

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, 双N/P沟道 2W, 8-SOIC, SMD

NEXPERIA

晶体管, MOSFET, P沟道, -11.8 A, -12 V, 0.015 ohm, -4.5 V, -680 mV

DIODES INC.

晶体管, MOSFET, P沟道, -2.7 A, -20 V, 100 mohm, -4.5 V, -890 mV

DIODES INC.

晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V

MICRO COMMERCIAL COMPONENTS

双极性晶体管, NPN, 40VDC, TO-92

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 60 V, 2730 μohm, 5 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 80 V, 3 MHz, 25 W, 2 A, 25 hFE

NXP

晶体管, 射频FET, 30 V, 13 mA, 250 mW, SOT-23

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 10 kohm

INFINEON

晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0051 ohm, 10 V, 4 V

ON SEMICONDUCTOR

MOSFET Transistor, N Channel, 340 mA, 60 V, 1.19 ohm, 10 V, 1 V

VISHAY

功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 55 A, 30 V, 0.0062 ohm, 10 V, 2.35 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -60 V, 3 MHz, 25 W, -2 A, 25 hFE

DIODES INC.

单晶体管 双极, NPN, 160 V, 155 MHz, 625 mW, 1 A, 450 hFE

VISHAY

晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V

VISHAY

晶体管, MOSFET, N沟道, 15 A, 150 V, 77 mohm, 10 V, 2 V

VISHAY

晶体管, MOSFET, P沟道, -110 A, -80 V, 0.0093 ohm, -10 V, -3 V

ON SEMICONDUCTOR

场效应管, MOSFET, P沟道, -30V, 25A, D-PAK

NEXPERIA

双极晶体管阵列, PNP, -65 V, 380 mW, -100 mA, 290 hFE, SOT-457

ON SEMICONDUCTOR

单晶体管 双极, PNP, -50 V, 690 MHz, 600 mW, -500 mA, 200 hFE

STMICROELECTRONICS

单晶体管 双极, PNP, 60 V, 130 MHz, 1.4 W, -3 A, 160 hFE

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 25V, 5.8A, 3-SOT-23

ON SEMICONDUCTOR

Dual MOSFET, Dual N Channel, 220 mA, 20 V, 0.75 ohm, 4.5 V, 1 V