NEXPERIA

单晶体管 双极, PNP, -300 V, 50 MHz, 250 mW, -100 mA, 25 hFE

NEXPERIA

单晶体管 双极, NPN, 60 V, 180 MHz, 1.65 W, 1 A, 63 hFE

INFINEON

双路场效应管, MOSFET, N和P沟道, 3.5 A, 25 V, 0.083 ohm, 10 V, 3 V

ROHM

晶体管, MOSFET, N沟道, 100 mA, 30 V, 5 ohm, 4 V, 1.5 V

INFINEON

晶体管, MOSFET, N沟道, 25 A, 100 V, 0.028 ohm, 10 V, 4.9 V

INFINEON

晶体管, MOSFET, N沟道, 150 A, 20 V, 0.0021 ohm, 10 V, 2.45 V

INFINEON

晶体管, MOSFET, N沟道, 31 A, 40 V, 13.8 mohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 25 A, 250 V, 0.084 ohm, 10 V, 5 V

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 40 V, 225 mW, 500 mA, 200 hFE

ON SEMICONDUCTOR/FAIRCHILD

场效应管, N型, 50V, 14A, TO-252AA

MULTICOMP

单晶体管 双极, 达林顿, NPN, 200 V, 60 W, 8 A, 375 hFE

INFINEON

晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0022 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 10.9 A, 250 V, 0.146 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 25 V, 100 MHz, 2 W, 1.5 A, 40 hFE

VISHAY

晶体管, MOSFET, N沟道, 12 A, 8 V, 0.009 ohm, 4.5 V, 800 mV

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 80 V, 100 MHz, 350 mW, 500 mA, 100 hFE

INTERNATIONAL RECTIFIER

场效应管, MOSFET, P沟道

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 100 mohm, 10 V, 1.7 V

VISHAY

晶体管, MOSFET, P沟道, -5.3 A, -60 V, 0.079 ohm, -10 V, -2 V

ON SEMICONDUCTOR/FAIRCHILD

达林顿双极性晶体管

ON SEMICONDUCTOR

达林顿晶体管, PNP, -100V, D-PAK

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 3 A, -60 V, 150 mohm, -10 V, -1.6 V

INFINEON

双路场效应管, MOSFET, N和P沟道, 2.7 A, 30 V, 110 mohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 55 A, 20 V, 0.0044 ohm, 10 V, 2.2 V

VISHAY

场效应管, MOSFET, N沟道, 75V, 28A, SOIC