VISHAY

晶体管, MOSFET, N沟道, 20 A, 30 V, 0.013 ohm, 4.5 V, 600 mV

VISHAY

场效应管, MOSFET, N通道, 20V, 35A POWERPAK, 整卷

VISHAY

MOSFET, N CHANNEL, 30V, 40A, POWERPAK 12

VISHAY

晶体管, MOSFET, N沟道, 40 A, 30 V, 0.00205 ohm, 10 V, 1.5 V

VISHAY

场效应管, MOSFET, N沟道, 100V, 30A, POWERPAK 1212-8

VISHAY

场效应管, MOSFET, 双N沟道, 30V, 11A, POWERPAIR-8

VISHAY

双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0042 ohm, 10 V, 2.4 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 16 A, 20 V, 7 mohm, 10 V, 2.2 V

VISHAY

场效应管, MOSFET, 双N沟道, 25V, 16A, POWERPAIR-6

SEMIKRON

晶体管, IGBT模块, 60A, 600V, T-98

SEMIKRON

晶体管, IGBT阵列&模块, N沟道, 40 A, 2.1 V, 1.05 kW, 1.2 kV, SEMITOP 3

SEMIKRON

晶体管, IGBT阵列&模块, N沟道, 22 A, 3 V, 145 W, 1.2 kV, SEMITRANS 6

SEMIKRON

晶体管, IGBT阵列&模块, 双NPN, 422 A, 1.85 V, 1.2 kV, Module

SEMIKRON

晶体管, IGBT模块, 400A, 600V, SEMITRANS5

SEMIKRON

晶体管, IGBT阵列&模块, 双NPN, 430 A, 2 V, 1.7 kV, SEMITRANS 3

INFINEON

单晶体管, IGBT, 16.5 A, 3.1 V, 125 W, 1.2 kV, TO-247, 3 引脚

INFINEON

单晶体管, IGBT, 40 A, 2.4 V, 179 W, 600 V, TO-247, 3 引脚

INFINEON

单晶体管, IGBT, 46 A, 3.6 V, 313 W, 1.2 kV, TO-247AC, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 230 mA, 60 V, 4.1 ohm, 4.5 V, 1.4 V

TEXAS INSTRUMENTS

芯片

ROHM

双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.036 ohm, 10 V, 2.5 V

INFINEON

功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 4 A, 800 V, 1.1 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 6.2 A, 650 V, 0.68 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 3.2 A, 600 V, 1.26 ohm, 10 V, 3 V