VISHAY

晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0179 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, P沟道, -4.7 A, -150 V, 0.91 ohm, -10 V, -3 V

DIODES INC.

单晶体管 双极, NPN, 40 V, 155 MHz, 1 W, 4 A, 450 hFE

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率

ON SEMICONDUCTOR

单晶体管 双极, NPN, 50 V, 420 MHz, 1 W, 1 A, 200 hFE

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 2.9 ohm, 4 V, 1.3 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 20 V, 150 MHz, 1.5 W, 5 A, 180 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -6 A, -20 V, 0.03 ohm, -4.5 V, -1.4 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, -40 V, 100 MHz, 1.5 W, -5 A, 150 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -370 mA, -60 V, 3.1 ohm, -10 V, -2.6 V

INFINEON

晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V

ON SEMICONDUCTOR

晶体管, JFET, -15 V, 16 mA, 32 mA, -1.4 V, SOT-323, JFET

ON SEMICONDUCTOR

单晶体管 双极, 音频, PNP, -80 V, 40 MHz, 70 W, -10 A, 60 hFE

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 4.7 kohm

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 10 A, 24 V, 0.0093 ohm, 4.5 V, 1.3 V

INFINEON

功率场效应管, MOSFET, N沟道, 22.4 A, 600 V, 0.162 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 10 A, 8 V, 0.015 ohm, 4.5 V, 800 mV

ROHM

晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 22 kohm, 47 kohm, 0.468 电阻比率

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, 1.4 A, -8 V, 100 mohm, -4.5 V, -700 mV

VISHAY

晶体管, MOSFET, P沟道, -12 A, -20 V, 0.0135 ohm, -4.5 V, -500 mV

VISHAY

功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.32 ohm, 10 V, 4.5 V

DIODES INC.

晶体管, MOSFET, N沟道, 300 mA, 50 V, 2 ohm, 5 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 12 A, 200 V, 0.135 ohm, 10 V, 4.9 V

VISHAY

晶体管, MOSFET, P沟道, 19 A, -100 V, 200 mohm, -10 V, -4 V

TEXAS INSTRUMENTS

MOSFET, N CHANNEL, 30V, 5A, 0.024OHM, SON-6