ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 5.5 A, 20 V, 0.029 ohm, 4.5 V, 1.3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5.2 A, 800 V, 1.8 ohm, 10 V, 3.75 V

VISHAY

晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.2 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0033 ohm, 20 V, 4 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 270 mA, 100 V, 6 ohm, 10 V, 2.6 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, -50 V, 420 MHz, 3.5 W, -2 A, 40 hFE

DIODES INC.

晶体管, MOSFET, N沟道, 4 A, 20 V, 0.03 ohm, 4.5 V, 600 mV

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 22 kohm, 47 kohm, 0.468 电阻比率

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 57 A, 100 V, 0.0064 ohm, 10 V, 3.1 V

INFINEON

晶体管, MOSFET, N沟道, 129 A, 135 V, 0.0067 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 46 A, 80 V, 0.0102 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 电源沟槽, 双N沟道, 98 A, 40 V, 0.002 ohm, 10 V, 2 V

VISHAY

晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0051 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0073 ohm, 10 V, 3.7 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, 400 V, 80 W, 8 A, 15 hFE

NEXPERIA

TRANSISTOR, ARRAY, PNP, -45V, -100mA, SOT-363-6

INFINEON

晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 150 mW, 40 mA, 60 hFE

INFINEON

晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 7.3 A, 30 V, 0.0175 ohm, 10 V, 1.1 V

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双N沟道, 9 A, 24 V, 0.012 ohm, 4.5 V, 1.3 V

INFINEON

晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, PowerTrench, 双N沟道, 93 A, 60 V, 0.0025 ohm, 10 V, 1.6 V

VISHAY

晶体管, MOSFET, P沟道, -60 A, -12 V, 0.0048 ohm, -4.5 V, -600 mV

NEXPERIA

单晶体管 双极, PNP, -50 V, 200 MHz, 250 mW, -200 mA, 290 hFE

INFINEON

双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -3 V