
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 35 V, 0.028 ohm, 10 V, 2.6 V

DIODES INC.
Dual MOSFET, N and P Complement, 3.8 A, 30 V, 0.034 ohm, 10 V, 1 V

VISHAY
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.313 ohm, 10 V, 4.5 V

INFINEON
晶体管, MOSFET, P沟道, -13 A, -150 V, 0.295 ohm, -10 V, -4 V

ON SEMICONDUCTOR
双极晶体管

VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V

INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.042 ohm, 10 V, 3 V

INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 650 V, 0.099 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 30 V, 50 mA, 150 mA, 10 V, SOT-323, JFET

ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率

ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3 A, 60 V, 0.062 ohm, 10 V, 2.6 V

ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, 40 V, 300 mW, 500 mA, 300 hFE, SC-70

VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.028 ohm, -10 V, -600 mV

VISHAY
功率场效应管, MOSFET, N沟道, 8 A, 600 V, 0.45 ohm, 10 V, 2 V

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 4.5 V, 1.3 V

NEXPERIA
单晶体管 双极, 开关, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 100 hFE

STMICROELECTRONICS
晶体管, MOSFET, P沟道, -10 A, -60 V, 0.13 ohm, -10 V, -4 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV