VISHAY

晶体管, N沟道

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V

ON SEMICONDUCTOR

晶体管 双极-射频, NPN, 12 V, 7 GHz, 800 mW, 150 mA, 100 hFE

ON SEMICONDUCTOR

晶体管, JFET, JFET, 30 V, 5 mA, 30 mA, -3 V, SOT-23, JFET

VISHAY

晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0037 ohm, 10 V, 2 V

VISHAY

场效应管, MOSFET, N沟道

NEXPERIA

单晶体管 双极, PNP, -60 V, 150 MHz, 390 mW, -2.7 A, 300 hFE

NEXPERIA

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm

VISHAY

晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00048 ohm, 10 V, 2.1 V

VISHAY

晶体管, MOSFET, N沟道, 2.6 A, 200 V, 1.5 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 192 A, 100 V, 0.0035 ohm, 10 V, 4 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -860 mA, -20 V, 120 mohm, -4.5 V, -1 V

INFINEON

晶体管, MOSFET, P沟道, -4.3 A, -12 V, 50 mohm, -4.5 V, -550 mV

ROHM

晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V

INFINEON

晶体管, MOSFET, N沟道, 106 A, 40 V, 0.0037 ohm, 10 V, 1.8 V

INFINEON

晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.1 ohm, 10 V, 1 V

VISHAY

功率场效应管, MOSFET, N沟道, 25 A, 600 V, 0.117 ohm, 10 V, 4 V

INFINEON

晶体管 双极-射频, NPN, 2.3 V, 65 GHz, 185 mW, 80 mA, 110 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, -600 mA, -20 V, 0.3 ohm, -4.5 V, -1.2 V

DIODES INC.

单晶体管 双极, NPN, 80 V, 160 MHz, 625 mW, 1.5 A, 300 hFE

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 30 hFE

VISHAY

晶体管, MOSFET, P沟道, 8.8 A, -60 V, 280 mohm, -10 V, -4 V

VISHAY

场效应管, MOSFET, P通道, -20V, -350MA, SOT-416-3

DIODES INC.

单晶体管 双极, PNP, 40 V, 270 MHz, 1.25 W, 3 A, 450 hFE

TAIWAN SEMICONDUCTOR

晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.04 ohm, 4.5 V, 950 mV