TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -3 A, -20 V, 0.063 ohm, -4.5 V, -1.3 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, -2.3 A, -60 V, 250 mohm, -10 V, -1.5 V

VISHAY

场效应管, MOSFET, P沟道, -60V, 5A, SOIC

ON SEMICONDUCTOR

晶体管, 带电阻, 50V, 47K/47KΩ, SOT-23

INFINEON

晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 1 A, 600 V, 2.8 ohm, 10 V, 4 V

DIODES INC.

晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V

MULTICOMP

单晶体管 双极, NPN, 45 V, 200 MHz, 625 mW, 800 mA, 400 hFE

STMICROELECTRONICS

单晶体管 双极, PNP, 80 V, 1.25 W, 1.5 A, 40 hFE

VISHAY

MOSFET, P-CH, -40V, -30A, POWERPAK SO

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V

NEXPERIA

单晶体管 双极, 开关, NPN, 40 V, 300 MHz, 200 mW, 200 mA, 100 hFE

TOSHIBA

晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V

TAIWAN SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 1 A, 600 V, 8 ohm, 10 V, 3.5 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 2.5 A, 35 V, 0.075 ohm, 10 V, 2.6 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道与P沟道, 30V, 0.25/0.87Ω, 750mA, SC-70-6

ON SEMICONDUCTOR

双极晶体管

INFINEON

晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.054 ohm, -4.5 V, -900 mV

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.213 电阻比率

VISHAY

晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0073 ohm, -4.5 V, -1 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 12 A, 60 V, 0.06 ohm, 10 V, 2 V

STMICROELECTRONICS

单晶体管 双极, PNP, -300 V, 20.8 W, -500 mA, 240 hFE

ON SEMICONDUCTOR

单晶体管 双极, 音频, NPN, 350 V, 30 MHz, 50 W, 4 A, 100 hFE

INFINEON

双路场效应管, MOSFET, N和P, 2.3 A, 30 V, 0.044 ohm, 10 V, 1.6 V