INFINEON

场效应管, MOSFET, N沟道, 40V, 195A, TO-220AB-3

ON SEMICONDUCTOR

单晶体管 双极, NPN, 30 V, 100 MHz, 310 mW, 1 A, 300 hFE

ON SEMICONDUCTOR

BIPOLAR TRANSISTOR, NPN, 60V SOT-23

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET™, N沟道, 170 A, 60 V, 0.0033 ohm, 10 V, 1.8 V

NEXPERIA

单晶体管 双极, NPN, 30 V, 180 MHz, 390 mW, 2.6 A, 500 hFE

NEXPERIA

单晶体管 双极, PNP, 40 V, 200 MHz, 300 mW, 2 A, 450 hFE

INFINEON

晶体管, MOSFET, N沟道, 49 A, 40 V, 7.8 mohm, 10 V, 1.2 V

DIODES INC.

单晶体管 双极, NPN, PNP, 45 V, 300 MHz, 200 mW, -100 mA, 290 hFE

NEXPERIA

双极晶体管阵列, 双PNP, -60 V, 250 mW, -500 mA, 2000 hFE, SOT-23

INFINEON

晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 160 mW, 35 mA, 95 hFE

INFINEON

晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 20 A, 200 V, 180 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 39 A, 80 V, 0.0225 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, PowerTrench, 双N沟道, 66 A, 80 V, 0.0033 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 1.1 A, 200 V, 0.605 ohm, 10 V, 4 V

INFINEON

晶体管 双极-射频, NPN, 15 V, 5 GHz, 280 mW, 45 mA, 70 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 350 mA, -20 V, 0.5 ohm, -4.5 V, -1 V

NEXPERIA

晶体管, MOSFET, N沟道, 59 A, 60 V, 8 mohm, 10 V, 3 V

NEXPERIA

晶体管, MOSFET, N沟道, 2.1 A, 60 V, 0.096 ohm, 10 V, 1.7 V

INFINEON

晶体管, MOSFET, AEC-Q101, N沟道, 35 A, 100 V, 0.0225 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 10 V, 150 MHz, 750 mW, 2 A, 200 hFE

ON SEMICONDUCTOR

双路场效应管, MOSFET, N和P沟道, 2 A, 20 V, 0.105 ohm, 4.5 V, 1.3 V

NEXPERIA

晶体管, BISS型, 高电压, NPN, 400V, 500mA, 4-SOT-223

INFINEON

晶体管, MOSFET, N沟道, 31 A, 100 V, 0.034 ohm, 10 V, 2 V

VISHAY

场效应管, P通道, MOSFET