INFINEON

晶体管, MOSFET, N沟道, 7.6 A, 500 V, 0.72 ohm, 13 V, 3 V

DIODES INC.

单晶体管 双极, PNP, 40 V, 190 MHz, 625 mW, -1.5 A, 475 hFE

ROHM

晶体管 双极预偏置/数字, 单路NPN, 40 V, 500 mA, 2.2 kohm

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 30V, 5A, 3-SOT-23

INFINEON

晶体管, MOSFET, P沟道, -360 mA, -100 V, 1.3 ohm, -10 V, -1.5 V

NEXPERIA

晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -600 mV

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 1.5 A, 30 V, 0.185 ohm, 8 V, 850 mV

NEXPERIA

晶体管, MOSFET, 沟槽式, N沟道, 6.9 A, 20 V, 0.015 ohm, 4.5 V, 650 mV

ON SEMICONDUCTOR/FAIRCHILD

场效应管, JFET, N沟道, -25V, SOT-23

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

INFINEON

晶体管, MOSFET, N沟道, 8.7 A, 20 V, 0.022 ohm, 4.5 V, 700 mV

DIODES INC.

双极晶体管阵列, PNP, -150 V, 300 mW, -200 mA, 60 hFE, SOT-26

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 3.2 A, 300 V, 1.65 ohm, 10 V, 1.65 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -4.5 A, -30 V, 0.056 ohm, -4.5 V, -1.3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 9 A, 30 V, 0.015 ohm, 10 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

射频晶体管, PNP, -30V 100MHz

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 5 A, 30 V, 0.027 ohm, 10 V, 1.6 V

VISHAY

晶体管, MOSFET, N沟道, 60 A, 20 V, 0.00125 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR

单晶体管 双极, PNP, -100 V, 95 MHz, 225 mW, -100 mA, 30 hFE

ON SEMICONDUCTOR

MOSFET Transistor, P Channel, -3 A, -20 V, 0.031 ohm, -4.5 V, -650 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, Trench, AEC-Q101, N沟道, 30 A, 40 V, 0.0056 ohm, 10 V, 2 V

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 500 mA, 1 kohm, 10 kohm, 0.1 电阻比率

BROADCOM LIMITED

晶体管, 射频FET, 5 V, 120 mA, 725 mW, 450 MHz, 6 GHz, SOT-343

INFINEON

双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 3.9 ohm, 10 V, 2 V