NEXPERIA

晶体管, MOSFET, 沟槽式, N沟道, 4.8 A, 20 V, 0.028 ohm, 4.5 V, 650 mV

INFINEON

双路场效应管, MOSFET, 双N沟道, 9.7 A, 30 V, 0.0125 ohm, 10 V, 1.8 V

INFINEON

场效应管, MOSFET, N沟道, 100V, 1.6A SOT-23

VISHAY

晶体管, MOSFET, N沟道, 5 A, 100 V, 0.028 ohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, 双N沟道, 60V, SOIC

VISHAY

晶体管, N沟道

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm

ON SEMICONDUCTOR/FAIRCHILD

晶体管, N沟道

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, -3.3 A, -30 V, 0.069 ohm, -10 V, -1.9 V

ON SEMICONDUCTOR

单晶体管 双极, 音频, NPN, 250 V, 30 MHz, 50 W, 8 A, 70 hFE

INFINEON

晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V

ROHM

晶体管, MOSFET, AEC-Q101, N沟道, 200 mA, 60 V, 1.7 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 200 mA, 600 V, 9.3 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

双极晶体管阵列, NPN, 40 V, 1 W, 500 mA, 100 hFE, SOIC

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -60 V, 200 MHz, 625 mW, -800 mA, 50 hFE

VISHAY

晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.07 ohm, 4.5 V, 1.2 V

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 500 mA, 10 kohm, 10 kohm, 1 电阻比率

VISHAY

MOSFET, N CHANNEL, 60V, 240mA, SOT-323-3

INFINEON

双路场效应管, MOSFET, N和P沟道, 7.3 A, 30 V, 0.023 ohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 60 V, 0.00465 ohm, 10 V, 4 V

ON SEMICONDUCTOR

晶体管, JFET, -25 V, 20 mA, 40 mA, -1.2 V, SC-74, JFET

ON SEMICONDUCTOR

单晶体管 双极, AEC-Q101, PNP, -30 V, 100 MHz, 310 mW, -1 A, 40 hFE

INFINEON

晶体管, MOSFET, N沟道, 50 A, 200 V, 40 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0085 ohm, 10 V, 2.8 V