TOSHIBA

晶体管, MOSFET, N沟道, 1.1 A, 20 V, 160 mohm, 4 V, 1.1 V

VISHAY

晶体管, MOSFET, N沟道, 60 A, 40 V, 0.005 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, P沟道, -15 A, -20 V, 0.0082 ohm, -4.5 V, -1.2 V

ON SEMICONDUCTOR

晶体管, MOSFET, 肖特基二极管, P沟道, -3.2 A, -20 V, 0.064 ohm, -4.5 V, -1.5 V

DIODES INC.

双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V

MULTICOMP

单晶体管 双极, 达林顿, NPN, 60 V, 125 W, 10 A, 1000 hFE

INFINEON

晶体管, MOSFET, N沟道, 300 A, 60 V, 0.00066 ohm, 10 V, 2.8 V

VISHAY

晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0155 ohm, 10 V, 2 V

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率

VISHAY

晶体管, MOSFET, N沟道, 18.2 A, 30 V, 0.0078 ohm, 10 V, 3 V

VISHAY

功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.31 ohm, 10 V, 4 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 47 A, 30 V, 0.0094 ohm, 4.5 V, 1.3 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 100 V, 3 MHz, 1.56 W, 3 A, 10 hFE

VISHAY

晶体管, MOSFET, P沟道, 3.8 A, -200 V, 0.86 ohm, -10 V, -4 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 18 A, 200 V, 180 mohm, 10 V, 4 V

DIODES INC.

晶体管, MOSFET, P沟道, 45 mA, -450 V, 150 ohm, -10 V, -3 V

ON SEMICONDUCTOR

双极晶体管

VISHAY

晶体管, MOSFET, N沟道, 2.9 A, 20 V, 0.045 ohm, 8 V, 850 mV

NEXPERIA

双极晶体管阵列, AEC-Q101, 双NPN, 65 V, 300 mW, 100 mA, 200 hFE, SOT-363

INFINEON

晶体管 双极-射频, NPN, 15 V, 5.5 GHz, 1 W, 120 mA, 70 hFE

VISHAY

晶体管, MOSFET, P沟道, -8.2 A, -12 V, 0.0068 ohm, -1.8 V, -800 mV

ROHM

单晶体管 双极, AEC-Q101, NPN, 30 V, 400 MHz, 200 mW, 1 A, 270 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 1 A, 100 V, 500 mohm, 10 V, 2.6 V

INFINEON

晶体管, MOSFET, N沟道, 35 A, 100 V, 0.0225 ohm, 10 V, 4 V