ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -2.8 A, -200 V, 2.06 ohm, -10 V, -5 V

INFINEON

双路场效应管, MOSFET, 双P沟道, 9.2 A, -12 V, 17 mohm, -4.5 V, -900 mV

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 1.2KV, 20A

INFINEON

晶体管, MOSFET, P沟道, 600 mA, -20 V, 600 mohm, -4.5 V, -1.5 V

MULTICOMP

单晶体管 双极, 达林顿, NPN, 100 V, 40 W, 4 A, 750 hFE

NXP

晶体管, JFET, JFET, -25 V, 40 mA, -2 V, SOT-23

VISHAY

晶体管, MOSFET, N沟道, 6 A, 30 V, 0.023 ohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, P沟道, -7.2 A, -20 V, 25 mohm, -4.5 V, -800 mV

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 55V, 30A TO-220AB

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 23 A, 100 V, 65 mohm, 10 V, 3 V

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm

INFINEON

晶体管 双极-射频, NPN, 4.7 V, 45 GHz, 160 mW, 45 mA, 160 hFE

ON SEMICONDUCTOR

双极晶体管阵列, 通用, 双PNP, -65 V, 380 mW, -100 mA, 220 hFE, SOT-363

DIODES INC.

双路场效应管, MOSFET, N和P沟道, 3.4 A, 30 V, 0.038 ohm, 10 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 12.5 A, 30 V, 9.5 mohm, 10 V, 2 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 2 A, 30 V, 0.085 ohm, 10 V, 1.75 V

NEXPERIA

双极晶体管阵列, PNP, 30 V, 250 mW, -100 mA, 420 hFE, SOT-143

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, PNP, 60 V, 12.5 W, 1.5 A, 25 hFE

DIODES INC.

单晶体管 双极, NPN, 160 V, 130 MHz, 1 W, 600 mA, 80 hFE

NEXPERIA

双极晶体管阵列, AEC-Q101, 双PNP, -60 V, 400 mW, -600 mA, 75 hFE, SOT-363

VISHAY

晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 3.6 A, 500 V, 1.8 ohm, 13 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 21 A, 30 V, 0.0029 ohm, 10 V, 1.8 V

INFINEON

晶体管, MOSFET, P沟道, 3 A, -30 V, 98 mohm, -10 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 6 A, 500 V, 0.76 ohm, 10 V, 5 V