NEXPERIA

晶体管, MOSFET, N沟道, 3.9 A, 30 V, 0.03 ohm, 10 V, 1.5 V

INFINEON

功率场效应管, MOSFET, N沟道, 5 A, 600 V, 1.35 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 8.9 A, 80 V, 0.014 ohm, 10 V, 4 V

ROHM

晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 10 kohm, 47 kohm, 0.213 电阻比率

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 18.5 A, 30 V, 0.0038 ohm, 10 V, 1.8 V

INFINEON

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0025 ohm, 10 V, 2 V

DIODES INC.

晶体管, MOSFET, N沟道, 320 mA, 100 V, 4 ohm, 10 V, 2.4 V

INFINEON

晶体管, MOSFET, N沟道, 33 A, 150 V, 0.031 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 67 A, 150 V, 0.009 ohm, 10 V, 4 V

ON SEMICONDUCTOR

双极晶体管

MICRO COMMERCIAL COMPONENTS

双极性晶体管, NPN, 40VDC, SOT-23

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 280 mA, 60 V, 1.6 ohm, 5 V, 1.76 V

INFINEON

晶体管, MOSFET, AEC-Q101, N沟道, 124 A, 100 V, 0.0028 ohm, 10 V, 2.7 V

DIODES INC.

单晶体管 双极, PNP, -45 V, 310 mW, -500 mA, 250 hFE

VISHAY

MOSFET,N CHANNEL,DIODE,20V,35A,PPAK1212-8

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

TEXAS INSTRUMENTS

双极晶体管阵列, NPN, 50 V, 500 mA, 1000 hFE, DIP

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, P CHANNEL, -30V, 0.0107OHM, -20A, MLP-8

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 300 hFE

ON SEMICONDUCTOR

晶体管, JFET, -30 V, 1.2 mA, 3 mA, -2.2 V, SOT-23, JFET

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率

VISHAY

晶体管, MOSFET, N沟道, 3.1 A, 400 V, 1.8 ohm, 10 V, 4 V

ON SEMICONDUCTOR

双极性晶体管阵列, NPN, 双路, 45V, SOT363

DIODES INC.

双路场效应管, MOSFET, AEC-Q101, N和P, 870 mA, 20 V, 0.3 ohm, 4.5 V, 1 V

ROHM

晶体管 双极预偏置/数字, 数字式, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm