NEXPERIA

晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.067 ohm, -4.5 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V

INFINEON

晶体管, MOSFET, BRT, N沟道, 300 mA, 60 V, 1.6 ohm, 10 V, 2.1 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率

ON SEMICONDUCTOR

场效应管, MOSFET, N+P沟道, 20V, SOT-563

INTERNATIONAL RECTIFIER

场效应管, N通道, MOSFET, 55V, 29A TO-220AB

ON SEMICONDUCTOR

双极性晶体管, PNP, -100V, SOT-23

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, 6.9 A, -30 V, 22 mohm, 10 V, 1.9 V

VISHAY

晶体管, MOSFET, N沟道, 10.3 A, 60 V, 22 mohm, 10 V, 3 V

MULTICOMP

单晶体管 双极, NPN, 80 V, 50 MHz, 800 mW, 500 mA, 20 hFE

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

ON SEMICONDUCTOR

双极性晶体管, HFE 300

MULTICOMP

单晶体管 双极, NPN, 40 V, 300 MHz, 625 mW, 200 mA, 300 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 40 V, 300 MHz, 225 mW, 600 mA, 40 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 160 V, 265 mW, 60 mA, 30 hFE

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 250 hFE

INFINEON

晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 2.8 V

NEXPERIA

晶体管, MOSFET, N沟道, 5.7 A, 30 V, 0.019 ohm, 4.5 V, 650 mV

DIODES INC.

晶体管, MOSFET, 增强模式, P沟道, 5.2 A, -12 V, 0.026 ohm, -4.5 V, -0.55 V

NEXPERIA

晶体管, 双极性, NPN, 45V, 100mA, SOT-323-3

INFINEON

晶体管, MOSFET, N沟道, 3.6 A, 40 V, 0.044 ohm, 10 V, 1.8 V

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 290 mW, -200 mA, 30 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 40 V, 300 MHz, 150 mW, 600 mA, 35 hFE