ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.075 ohm, -10 V, -2.6 V

INFINEON

功率场效应管, MOSFET, N沟道, 7.4 A, 700 V, 0.9 ohm, 10 V, 3 V

VISHAY

功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V

VISHAY

功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -6 A, -30 V, 0.033 ohm, -10 V

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 4.4 A, 100 V, 0.044 ohm, 10 V, 4 V

NEXPERIA

晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 10 kohm

ROHM

双极晶体管阵列, AEC-Q101, 双PNP, -50 V, 150 mW, -150 mA, 120 hFE, SC-88

ON SEMICONDUCTOR/FAIRCHILD

MOSFET, N CHANNEL, 30V, 0.0081OHM, 22A, POWER 56-8

ADVANCED POWER ELECTRONICS CORP

双路场效应管, MOSFET, 双N沟道, 7.6 A, 30 V, 0.022 ohm, 10 V, 1 V

TEXAS INSTRUMENTS

达林顿晶体管阵列, NPN, 7, 50V

VISHAY

晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V

INFINEON

场效应管, MOSFET, P沟道, -40V, 10.5A, SOIC

ROHM

晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V

VISHAY

场效应管, MOSFET, NP通道, 40V, 10/-9.2A, SOIC-8

INFINEON

晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV

VISHAY

场效应管, P通道, MOSFET

INFINEON

晶体管, MOSFET, N沟道, 27 A, 55 V, 35 mohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 25 V, 50 MHz, 350 mW, 100 mA, 400 hFE

VISHAY

双路场效应管, MOSFET, 双P沟道, -3.2 A, -60 V, 0.051 ohm, -10 V, -3 V

VISHAY

场效应管, MOSFET, N沟道, 60V, 6A, POWERPAK

INFINEON

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V

ON SEMICONDUCTOR

达林顿晶体管, NPN, 80V, SOT-223

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 2.3 A, 100 V, 0.2 ohm, 10 V, 4 V