ON SEMICONDUCTOR

单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 100 mA, 200 hFE

VISHAY

场效应管, MOSFET, N沟道, 20V, 25A, SC70-6

ON SEMICONDUCTOR

晶体管 双极预偏置/数字, 单路PNP, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道 2A

INFINEON

晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0093 ohm, 10 V, 1.8 V

ROHM

晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0077 ohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 2 V

VISHAY

场效应管, MOSFET, P沟道, -30V, -2.7A

INFINEON

MOSFET, N CHANNEL, 25V, 44A, PQFN-5

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 310 mW, 500 mA, 100 hFE

DIODES INC.

单晶体管 双极, POWERDI?5, NPN, 60 V, 130 MHz, 3.2 W, 6 A, 200 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -3 A, -60 V, 105 mohm, -10 V, -1.6 V

INFINEON

功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, 双N沟道, 40V, SOIC

VISHAY

场效应管, MOSFET, P沟道, D-PAK

ON SEMICONDUCTOR/FAIRCHILD

场效应管, JFET, N沟道, -30V, SOT-23

INFINEON

单晶体管, IGBT, 11 A, 3.17 V, 60 W, 1.2 kV, TO-263, 3 引脚

NEXPERIA

晶体管, MOSFET, N沟道, 335 mA, 55 V, 2.3 ohm, 4.5 V, 1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, PNP SOT-23 [ROHS Substitute: 9846859]

ON SEMICONDUCTOR

Bipolar (BJT) Single Transistor, PNP, -100 V, 120 MHz, 490 mW, -2 A, 50 hFE

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 100 A, 30 V, 950 μohm, 10 V, 1.4 V

ON SEMICONDUCTOR

单晶体管 双极, 通用, NPN, 80 V, 3 MHz, 30 W, 3 A, 3 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 21 A, 30 V, 28 mohm, 10 V, 1.7 V

NEXPERIA

单晶体管 双极, NPN, PNP, -60 V, 150 MHz, 480 mW, -1.5 A, 285 hFE

VISHAY

晶体管, MOSFET, N沟道, 19 A, 200 V, 90 mohm, 10 V, 4 V