INFINEON

晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0012 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0018 ohm, 10 V, 2.2 V

VISHAY

场效应管, MOSFET, N沟道, 3.8W, 8-1212

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V

NEXPERIA

单晶体管 双极, NPN, 80 V, 110 MHz, 700 mW, 5.1 A, 470 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 70 A, 120 V, 0.0062 ohm, 10 V, 3 V

VISHAY

功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率

NEXPERIA

晶体管, MOSFET, P沟道, -3.2 A, -12 V, 0.059 ohm, -4.5 V, -680 mV

VISHAY

晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 160 A, 30 V, 3.1 mohm, 10 V, 1.9 V

MULTICOMP

晶体管, 单结(UJT), 2 A, 1 μA, 10 mA, TO-18, 3引脚, 125 °C

INFINEON

晶体管, MOSFET, P沟道, -100 A, -30 V, 0.0041 ohm, -10 V, -2.5 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, P沟道, -20V, 4.5A, SSOT-6

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -40 V, 100 MHz, 2 W, -3 A, 150 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V

DIODES INC.

单晶体管 双极, NPN, 65 V, 300 MHz, 200 mW, 100 mA, 290 hFE

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 200V, 18A, TO-220AB

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 13A

ON SEMICONDUCTOR/FAIRCHILD

双极性晶体管, NPN, 40V, SOIC

ROHM

晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 100 V, 0.37 ohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 170 mohm, -10 V, -1.8 V

INFINEON

晶体管 双极-射频, NPN, 3.25 V, 57 GHz, 120 mW, 40 mA, 150 hFE

VISHAY

场效应管, MOSFET, P沟道, -60V, 185mA, TO-236