ON SEMICONDUCTOR

双极晶体管阵列, 通用, NPN, 45 V, 380 mW, 100 mA, 450 hFE, SOT-363

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.9 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 80 V, 100 MHz, 625 mW, 500 mA, 100 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V

VISHAY

晶体管, MOSFET, N沟道, 3 A, 150 V, 68 mohm, 10 V, 2 V

NEXPERIA

单晶体管 双极, NPN, 80 V, 180 MHz, 500 mW, 1 A, 100 hFE

NEXPERIA

单晶体管 双极, NPN, 80 V, 180 MHz, 650 mW, 1 A, 63 hFE

DIODES INC.

晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.06 ohm, -4.5 V, -600 mV

NEXPERIA

晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.027 ohm, -4.5 V, -700 mV

VISHAY

N CHANNEL, MOSFET, 30V, 30A, PowerPAK SO

INTERNATIONAL RECTIFIER

场效应管, P通道, MOSFET, -55V, 11A, IPAKS

ON SEMICONDUCTOR

场效应管, MOSFET, P沟道, -20V, 3.2A SOT-23

INTERNATIONAL RECTIFIER

场效应管, P通道, MOSFET, -55V, 31A, D-PAK

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率

ON SEMICONDUCTOR

单晶体管 双极, NPN, 60 V, 390 MHz, 15 W, 3 A, 300 hFE

INFINEON

晶体管, MOSFET, N沟道, 9 A, 500 V, 0.59 ohm, 13 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 41 A, 55 V, 0.0175 ohm, 10 V, 4 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -11.4 A, -30 V, 10 mohm, -10 V, -2.5 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 2.4 A, 30 V, 0.045 ohm, 10 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0037 ohm, 10 V, 2.8 V

INFINEON

晶体管, MOSFET, N沟道, 87 A, 150 V, 0.0079 ohm, 10 V, 3.8 V

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 3 A, 100 V, 220 mohm, 10 V, 4 V

ROHM

晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.04 电阻比率

VISHAY

晶体管, MOSFET, N沟道, 60 A, 60 V, 0.005 ohm, 10 V, 2.5 V